GC2M100065P
SiC MOSFET碳化硅 MOSFET
电压
650 V
电流 (Tc=25℃)
28.5 A
RDS(on)
100 mΩ
封装
TO-220-3
详细参数
- Voltage (V)
- 650
- RDS(ON) (mΩ)
- 100
- ID (A)@25℃
- 28.5
- QG (nC)
- 66
- EON (mJ)
- 59.3
- EOFF (mJ)
- 16.5
- PD (W)
- 123
- V(sp)(V)
- 650
- R(on)(mΩ)
- 100
- I(A) Tc=25℃
- 28.5
- I(A) Tc=100℃
- 19
- V(th)(V)
- 2.6
- P(W)
- 123
- Tj(max)(℃)
- 175