GC2M016120S
SiC MOSFET碳化硅 MOSFET
电压
1200 V
电流 (Tc=25℃)
106 A
RDS(on)
16 mΩ
封装
SOT-227
详细参数
- Voltage (V)
- 1200
- RDS(ON) (mΩ)
- 16
- ID (A)@25℃
- 106
- QG (nC)
- 275
- EON (mJ)
- -
- EOFF (mJ)
- -
- PD (W)
- 375
- V(sp)(V)
- 1200
- R(on)(mΩ)
- 16
- I(A) Tc=25℃
- 105
- I(A) Tc=100℃
- 75
- V(th)(V)
- 2.6
- P(W)
- 556
- Tj(max)(℃)
- 175