GC2M080120K
SiC MOSFET碳化硅 MOSFET
电压
1200 V
电流 (Tc=25℃)
36 A
RDS(on)
80 mΩ
封装
TO-247-4
详细参数
- Voltage (V)
- 1200
- RDS(ON) (mΩ)
- 80
- ID (A)@25℃
- 36
- QG (nC)
- 85
- EON (mJ)
- 0.18
- EOFF (mJ)
- 0.07
- PD (W)
- 166
- V(sp)(V)
- 1200
- R(on)(mΩ)
- 80
- I(A) Tc=25℃
- 36
- I(A) Tc=100℃
- 24
- V(th)(V)
- 2.4
- P(W)
- 166
- Tj(max)(℃)
- 175