GC2M060065D
SiC MOSFET碳化硅 MOSFET
电压
650 V
电流 (Tc=25℃)
41 A
RDS(on)
60 mΩ
封装
TO-247-3
详细参数
- Voltage (V)
- 650
- RDS(ON) (mΩ)
- 60
- ID (A)@25℃
- 41
- QG (nC)
- 50
- EON (mJ)
- 140
- EOFF (mJ)
- 52
- PD (W)
- 166
- V(sp)(V)
- 650
- R(on)(mΩ)
- 60
- I(A) Tc=25℃
- 41
- I(A) Tc=100℃
- 31
- V(th)(V)
- 2.6
- P(W)
- 166
- Tj(max)(℃)
- 175